DGIST announced on Thursday, May 2, that Professor Jae Eun Jang’s team examined the high-frequency nature of one-layer graphite in the Information and Communication Technology Division and developed a high-power high frequency transmission line that provides increased
concentration of devices in Graphene Triggers.
These results have demonstrated the properties of high frequency transmission, with a large increase that can replace the metal used in existing high-speed semiconductor processing, and the possibility of its use as a graphite transmission line is expected in the future. Because of the high and high-speed integration of semiconductor devices, resistance from metal conductors, where signals are transmitted between components, increases geometrically and reaches permissible current density limits.
To overcome this problem, carbon-based nanoscale structures such as graphene and carbon nanotubes, which are thought to replace existing metals, emerged as the next generation of new materials. However, Grafen has a hexagonal carbon network with a very thin thickness of 0.3 nm, electrical conductivity is 100 times higher than copper and mobility is 100 times higher than electrons than silicon.
This is called an electronic material that can replace existing metal and semiconductor materials. However, pure graphite has a concentration of 1012 cm & supmin; ² with thin structural features of nanometers, which leads to very high resistance to graphite. To overcome this limitation, Professor Zhang’s team conducted a study to improve the graphene properties of high frequency transmission by increasing the concentration of devices in graphene. By combining graphene and amorphous carbon, the team increased graphene concentration and improved graphene’s electrical properties. The transmission of high frequency graphene is -8 dB, which may be comparable to nanoscale nanoscale metals.
The team has also shown that graft defects have reduced high frequency graphene transmission and developed new powerful doping techniques that minimize internal defects.
This new doping technique increases the concentration of graphene in the device by 2 × 10 13 cm-2 and shows stable thermal and electrical properties. The high frequency graphite line, developed by Professor Jang’s research team, has demonstrated high signal transfer performance and strong performance that can be used in metalworking in the existing semiconductor industry as well as in next-generation integrated circuits.